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IBM-Stanford Spintronic Science and Applications Center Areas of Research
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In order to develop spintronics technology, it is first necessary to fully explore potential materials and
their properties; by obtaining a thorough understanding of spintronic phenomena we can effective utilize them
to create spin-engineered materials and working devices.
- Oxides
- LSMO
- STO
- SRO
- Magnetite
- NiO/CoO/MnO
- MgO
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Soft Magnetic Materials
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Magnetic Tunnel Junctions -- material aspects
- Giant tunneling spin polarization
- Kondo assisted tunneling
- IETS
- Carbon-based Materials
Key to developing advanced spintronic technology is understanding
and harnessing the dynamics of magnetization; in particular precise control of domain formation
and domain wall motion will be critical to successfully developing concepts like the
"Racetrack" memory project
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Domain Wall (DW) Dynamics
- Current induced DW motion along nanowires
- DW velocity
- Oscillatory depinning of DWs
- Resonant amplification of DW motion
- Field induced DW motion along nanowires
- Current induced vortex motion
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Spin Momentum Transfer
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Toggle Mode Switching
Racetrack Memory, Spin Injectors, Magnetic Tunnel Transistors, and a host of more exotic spintronic designs take us
beyond the realm of the simple GMR spinvalve.
- Racetrack Memory Project
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Spin Polarized Current Injectors
- Magnetic Tunnel Junctions -- device aspects
- Magnetic Random Access Memory (MRAM)
- Field Sensors
- Magnetic Logic
The advanced automated deposition tools and experimental apparatus that make our exploration of
spintronics possible.
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