Prior to the development of the PLD-TEON deposition system, magnetoelectronics and spintronics samples and devices were fabricated in one of two sputtering systems; they continue to serve as workhorses for experiments that don't require the exotic capacity of the PLD-TEON.
With shadow masks, we have made junctions down to 20x20 microns; lithographically defined junctions have been produced as small as 0.1x0.1 microns. We have two systems on line; one (the "S-System") has 6 sources and a 20 sample capacity, the other ("A-System") has additional deposition capability and accepts up to 24 one-inch substrates.

A unique aspect of our automated deposition systems is the ability to place one of several precision shadow masks in close proximity to the substrate. This placeable mask technology lets us pattern simple devices directly during deposition, allowing us to immediately test them upon removal from the deposition system; no post-process etching or lithography is necessary.
In the photo to the left you can see the A-system open to inspect the shadow mask platter; each of the circular bosses holds a mask for one of the patterns incorporated in the junctions shown in the top right of the photo at the top of this page. There is also a large aperture to permit full-substrate coverage during deposition.

This is a close-up showing a magnetic tunnel junction device deposited using the placeable shadow mask system. The PLD-TEON deposition system is equipped with an expanded version of this placeable mask technology.

The S-system has the following process capabilities:

• DC or RF Magnetron sputtering from 6 targets
• Reactive or plasma oxidation of deposited films
• In-situ masking with up to 8 patterns
• Substrate heating up to ~600°C
• Capacity for 20 one-inch diameter or square wafers, or assorted other arrangements of special wafer configurations.

The A-system expands upon the capabilities of the S-System and features these process capacities:

• DC or RF Magnetron sputtering from 6 targets
• Ion Beam Deposition (IBD) from 5 targets
• DC or RF Magnetron co-sputtering from a "Triode" of 3 targets
• Reactive, plasma or atomic oxidation
• Plasma etching
• Evaporative Deposition from 2 K-cells
• In-situ masking with up to 8 patterns
• Substrate heating up to ~600°C
• Capacity for 24 one-inch diameter or square wafers, or assorted other arrangements of special wafer configurations.

In this photo you can see the array of magnetron sources around the inner circumference of the right side of the chamber. Each has its own pneumatically-driven shutter which can open or close in 100 milliseconds. The flat plate on the left side is a baffle to help confine the plumes from the ion beam sputter source, the triode magnetron array and the K-cells/atomic gas source.

The Triode magnetron array and Ion Beam sputtering source are mounted on a door to permit easy access for maintenance; the door (as well as the chamber lid) features a differentially-pumped dual o-ring seal that allows us to achieve ultra-high-vacuum process conditions while permitting quick venting and opening of the chamber.
The Triode source (visible on the left) is a cluster of three small magnetron sputter guns adjusted so their plumes are coincident on the substrate. This arrangement allows co-sputtering from up to three targets to allow quick material investigations without requiring the manufacture of alloy targets, and thus is especially useful when trying to find the correct elemental proportions for a new alloy material.
The Ion Beam sputtering source emits a beam of noble gas ions from the grid arrangement on the upper right quadrant of the door; this beam strikes the target rotated into the topmost position on the turret (visible between the trapezoidal "fins" in the photo). The beam sputters material off the target, forming a plume which travels upwards through an aperture in a baffle inside the chamber to coat the substrate.