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IBM-Stanford Spintronic Science and Applications Center Scientists

 William J. Gallagher
Photo of William Gallagher

 William J. Gallagher
 Sr. Manager, Magnetoelectronics
 Thomas J. Watson Research Center
 IBM Research


Biography
William J. Gallagher is a Research Staff member at the IBM Thomas J. Watson Research Center. He joined IBM in 1978 after receiving his B.S. in Physics summa cum laude from Creighton University in 1974 and his Ph.D. in Physics from MIT. He was a co-recipient of the Creighton College of Arts and Sciences Senior Award and went through MIT on a National Science Foundation Pre-doctoral Fellowship. He worked for five years at IBM on scientific and engineering aspects of Josephson computer technology and then managed IBM's Exploratory Cryogenics Research Group for six years. Dr. Gallagher has been leading an effort to explore the use of magnetic tunnel junctions for nonvolatile RAM. Currently he is senior manager of Magnetoelectronics at IBM.

Technical accomplishments during Dr. Gallagher's career include: the (subsequently verified) prediction of compound geometrical resonances and reduced Josephson currents observed when tunneling into superconducting proximity effect bilayers; the production of dc SQUIDS with the lowest flux-noise ever reported at low frequencies; the first study of electrical pulse propagation at and above the THz gap frequency of conventional superconductors; the discovery of the highly anisotropic supercurrent carrying capability of high temperature superconductors and the characterization of the basic anisotropy of YBa2Cu3O7-x;; the first demonstrations of ideally low noise dc SQUIDS at 77 K and of working SQUID magnetometers and gradiometers operating at 77 K, the first demonstrations of microstructured magnetic tunnel junctions with controlled response, and the first demonstration of a MTJ-based nonvolatile memory.

In 1989 Dr. Gallagher participated in the formation of the IBM-AT&T-MIT-founded Consortium for Superconducting Electronics (CSE). He served as a Director of the CSE from 1989 until 1995. In 2000 Dr. Gallagher helped establish the MRAM Development Alliance in which IBM and Infineon Technologies are collaboratively developing MRAM technology. Dr. Gallagher is a senior member of the IEEE and a fellow of the American Physical Society. He has served as Assistant to the Chairman of the APS Panel on Public Affairs, on the Executive Committee of the APS Forum on Physics and Society, and on the Board of Directors of the Applied Superconductivity Corporation. He has additionally served on numerous study and review panels convened by organizations such as the National Research Council, the National Science Foundation, the Office of Naval Research, and the Office of Technology Assessment. He served on the editorial board of the Journal of Superconductivity, on the Assessment Panel of the Center for Electronics and Electrical Engineering of the National Institute of Standards and Technology, and on the Executive Advisory Board of the NSF Science and Technology Center for Superconductivity.

Dr. Gallagher has over one hundred fifty publications in the areas of thin film magnetics, superconductivity, and superconducting devices and physics, and holds twelve U.S. patents and several pending patents.



  

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