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IBM-Stanford Spintronic Science and Applications Center Scientists
 Li Gao
Photo of Li Gao
  Li Gao
 SpinAps Graduate Student, Ph.D Program, Applied Physics
 Stanford University

Biography
Li Gao is a Ph.D. graduate student in the Department of Applied Physics at Stanford University. His research within SpinAps involves two main projects. In a first project Li is studying spin transfer torque in ferrimagnetic layers in both spin-valves and magnetic tunnel junctions (MTJ). The MTJs have MgO tunnel barriers, which give giant tunnel spin polarization of the tunneling current. There has been considerable interest in spin momentum transfer in recent years, motivated by both its novel physics and the possibility of novel, direct-current-switched magnetic memory devices. If a magnetic memory element can be switched by the current passing through it, rather than by external magnetic fields, the development of a high density non-volatile magnetic random access memory would be greatly simplified.

In a second project, Li is carrying out research on tunneling anisotropic magnetoresistance in magnetic tunnel junction devices. This effect derives from the interplay between an anisotropy in the density of states in the magnetic electrodes of the MTJ when the magnetization direction of these electrodes is rotated from in the plane to out of the plane of these layers.

A native of Shandong, China, Gao received his Bachelor's degree in physics from Nanjing University in 2003

  

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