In recent projects, we have created a wide range of devices such as magnetic nanowires, phase-change memory elements, and mechanical break junctions for molecular electronic devices. Figure 2 shows a phase-change bridge device, where electron beam lithography was used to create the narrow (20nm) bridge of phase-change material. The rest of the device was created using optical lithography. This division, of reserving electron beam lithography for the critical nano-scale fabrication, is typical of our fabrication approach. Figure 3 shows a cantilever used in our FM NMR spectroscopy project, where again ebeam lithography was used just for the critical cantilever definition.

Figure 2. 20 nm wide phase change bridge created using electron beam lithography. The bridge spans contacts made with optical lithography.

Figure 3. Cantilever fabricated using ebeam lithography (in collaboration with Ben Chui)