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Focussed Ion Beam (FIB)

The Focused Ion Beam (FIB) tool can cut away (mill) material from a defined area with dimensions typically in square microns or deposit material onto it. Milling is achieved by accelerating concentrated gallium ions to a specific site, which etches off any exposed material, leaving a very clean hole or surface. By introducing gases or an organic gas compound, the FIB can selectively etch one material much faster than surrounding materials, or deposit a metal or oxide. The FIB is used for such tasks as site-specific cross-sectioning for interfacial microstructure studies, preferential removal of certain metals or oxides, semiconductor device editing or modifications, site-specific TEM sample preparation, and grain imaging.

Schematic of FIB Column

IBM Almaden's Materials Characterization and Analysis Lab uses an FEI 830 XL Dual Beam system that integrates the FIB with a ultra-high-resolution SEM, which allows the analyst to capture an image of a specific site (a "snapshot" of its condition) while performing a milling or deposition procedure on it. This lab supports research in thin-film studies, dielectric materials, defect analysis and nanotechnology.






  

Techniques
Auger Electron Spectroscopy

Field Emission Transmission Electron Microscopy

Focussed Ion Beam (FIB)

Ion Beam Surface Analysis

Nuclear Magnetic Resonance (NMR) analysis

Scanning Electron Microscopy (SEM)

Scanning Probe Laboratory

Secondary Ion Mass Spectroscopy (SIMS)

Specular X-ray Reflectivity

Thermal Analysis

X-ray Diffraction

X-ray Photoelectron Spectroscopy (XPS)


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